Infineon IPB049N08N5ATMA1

Name: Infineon IPB049N08N5ATMA1
Brand: Infineon
SKU: IPB049N08N5ATMA1

Mosfet, N-Ch, 80V, 80A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB049N08N5ATMA1

$ 1.191

Obsolete

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Distributor		SKU		Min	Pkg
Arrow Electronics		IPB049N08N5ATMA1	800	1		1.191	1.191	1.191	1.191	1.191
Rochester Electronics		IPB049N08N5ATMA1	1,000					1.310	1.090	0.969	11h
DigiKey	2	448-IPB049N08N5ATMA1CT-ND	8	1	Cut Tape	3.340	3.340	3.340	3.340	3.340
Avnet		IPB049N08N5ATMA1	0	1K							3d
Farnell	3	IPB049N08N5ATMA1	0	1	Cut Tape	3.005*	1.841*	1.692*	1.354*	1.354*	10h

数据表和文档

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IHS

Datasheet12 页0 年前

库存历史记录

3 个月趋势:

-44.03%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2014-12-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-09-30

LTD Date2026-03-31

描述

由其分销商提供的 Infineon IPB049N08N5ATMA1 的描述。

Mosfet, N-Ch, 80V, 80A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB049N08N5ATMA1

Newark

Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

Fly-Wing Technology

Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 80A I(D), 80V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 80V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow

element14 APAC

Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB049N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.

Infineon