Infineon IPB039N10N3GATMA1

Name: Infineon IPB039N10N3GATMA1
Brand: Infineon
SKU: IPB039N10N3GATMA1

MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity: N Channel; Continuous Dra

$ 1.39

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Distributor		SKU		Min	Pkg
Avnet		IPB039N10N3GATMA1	3,000	1K					1.218	1.126	4d
Newark		IPB039N10N3GATMA1	2,719	1		4.030	2.650	1.860	1.660	1.660
Arrow Electronics	3	IPB039N10N3GATMA1	1,000	1		2.470	1.956	1.551	1.196	1.196
Rochester Electronics		IPB039N10N3GATMA1	13,987					1.320	1.180	1.110	21h
DigiKey	3	IPB039N10N3GATMA1CT-ND	14,834	1	Cut Tape	4.190	2.747	1.929	1.609	1.609

数据表和文档

下载 Infineon IPB039N10N3GATMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

库存历史记录

3 个月趋势:

-9.26%

CAD 模型

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供应链

Country of OriginMalaysia, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-21

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPB039N10N3GATMA1 的描述。

MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Dra

Newark

Power MOSFET, N Channel, 100 V, 160 A, 0.0033 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK

Verical

Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA

IHS

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

Farnell