Infineon IKW50N60TFKSA1

Name: Infineon IKW50N60TFKSA1
Brand: Infineon
SKU: IKW50N60TFKSA1

IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube

$ 2.995

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet	2	61M6736	829	1		6.140	3.590	3.020	2.830	2.830	11h
Newark		IKW50N60TFKSA1	2,724	1		6.140	3.590	3.020	2.830	2.830
Arrow Electronics	3	IKW50N60TFKSA1	8,694	1		4.949	3.221	2.767	2.337	2.337
DigiKey		IKW50N60TFKSA1-ND	158	1	Tube	8.400	8.400	4.809	3.442	3.057
Rochester Electronics		IKW50N60TFKSA1	215								9h

数据表和文档

下载 Infineon IKW50N60TFKSA1 的数据表和制造商文档。

TME

Datasheet13 页12 年前

Upverter

element14 APAC

_legacy Avnet

Farnell

库存历史记录

3 个月趋势:

-11.50%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IKW50N60TFKSA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-14

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon IKW50N60TFKSA1 的描述。

IGBT 600V 80A 333W TO247-3 / Trans IGBT Chip N-CH 600V 80A 333000mW 3-Pin(3+Tab) TO-247 Tube

Win Source

600 V, 50 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

IGBT, N, 600V, 50A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:50A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:333W; Power Dissipation Pd:333W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC

Hard-switching 600 V, 50 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon