Infineon IGP50N60TXKSA1

Name: Infineon IGP50N60TXKSA1
Brand: Infineon
SKU: IGP50N60TXKSA1

Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(3+Tab) TO-220AB Tube

$ 1.433

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IGP50N60TXKSA1	45	1		2.343	2.343	2.343	2.343	2.343
Rochester Electronics		IGP50N60TXKSA1	7,636					1.390	1.240	1.170	22h
Avnet		IGP50N60TXKSA1	0	500							4d
Farnell		IGP50N60TXKSA1	515	1		4.680*	2.394*	2.178*	1.826*	1.826*	22h
Mouser	2	726-IGP50N60TXKSA1	293	1	Tube	4.070	2.080	1.890	1.590	1.590

数据表和文档

下载 Infineon IGP50N60TXKSA1 的数据表和制造商文档。

IHS

Datasheet12 页10 年前

Upverter

Farnell

TME

库存历史记录

3 个月趋势:

-26.93%

CAD 模型

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-20

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

LTB Date2026-03-15

LTD Date2026-09-15

描述

由其分销商提供的 Infineon IGP50N60TXKSA1 的描述。

Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(3+Tab) TO-220AB Tube

Verical

Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3

TodayComponents

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT,600V,50A,TO220; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; Power Dissipation Max:333W

element14 APAC

Hard-switching 600 V, 50 A single TRENCHSTOP™ IGBT3 in TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Infineon