Infineon IGP30N65F5XKSA1

Name: Infineon IGP30N65F5XKSA1
Brand: Infineon
SKU: IGP30N65F5XKSA1

Trans IGBT Chip N-CH 650V 55A 188000mW 3-Pin(3+Tab) TO-220 Tube

$ 1.4

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Newark	IGP30N65F5XKSA1	419	1		1.640	1.580	1.520	1.400	1.360
DigiKey	448-IGP30N65F5XKSA1-ND	2	1	Tube	2.890	2.890	2.890	2.890	2.890
Avnet	IGP30N65F5XKSA1	0	500							13h
Arrow Electronics	IGP30N65F5XKSA1	0	500
Farnell	IGP30N65F5XKSA1	0	1		3.164*	2.038*	1.448*	1.050*	1.050*	10h

数据表和文档

下载 Infineon IGP30N65F5XKSA1 的数据表和制造商文档。

IHS

Datasheet14 页0 年前

TME

库存历史记录

3 个月趋势:

-1.93%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-06-11

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

LTB Date2026-03-15

LTD Date2026-09-15

描述

由其分销商提供的 Infineon IGP30N65F5XKSA1 的描述。

Trans IGBT Chip N-CH 650V 55A 188000mW 3-Pin(3+Tab) TO-220 Tube

Verical

IGBT TRENCH 650V 55A TO220-3 / IGBT Trench 650 V 55 A 188 W Through Hole PG-TO220-3

Win Source

Insulated Gate Bipolar Transistor, 55A I(C), 650V V(BR)CES, N-Channel, TO-220AB

IHS

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Infineon

Igbt, Single, 650V, 55A, To-220; Continuous Collector Current:55A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:188W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IGP30N65F5XKSA1

Newark