Infineon FZ2400R17HP4B29BOSA2

Name: Infineon FZ2400R17HP4B29BOSA2
Brand: Infineon
SKU: FZ2400R17HP4B29BOSA2

1700 V, 2400 A single switch IGBT module, AG-IHMB190-1-9, RoHS

$ 1,200.34

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Distributor	SKU		Min	Pkg
DigiKey	FZ2400R17HP4B29BOSA2-ND	1	1	Tray	1,165	1,165	1,165	1,165	1,165
Newark	FZ2400R17HP4B29BOSA2	0	1		1,200	1,200	1,200	1,200	1,200
Future Electronics	FZ2400R17HP4B29BOSA2	0	1	Tray	1,279	1,218	1,218	1,218	1,218
Avnet	FZ2400R17HP4B29BOSA2	0	1		1,436	1,268	1,245	1,245	1,245	14h
Arrow Electronics	FZ2400R17HP4B29BOSA2	0	1		1,284	1,272	1,234	1,197	1,185

数据表和文档

下载 Infineon FZ2400R17HP4B29BOSA2 的数据表和制造商文档。

Infineon

Datasheet1 页12 年前

Farnell

Newark

iiiC

_legacy Avnet

库存历史记录

3 个月趋势:

-50.00%

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InfineonFZ2400R17HP4B29BOSA2

InfineonFZ2400R17HP4B9HOSA2

Price @ 1000

$ 1,200.34

$ 889.11

Stock

277,685

247,629

Authorized Distributors

Mount

Screw

Case/Package

Module

Collector Emitter Breakdown Voltage

1.7 kV

Max Collector Current

2.4 kA

Power Dissipation

15.5 kW

Collector Emitter Saturation Voltage

2.25 V

Reverse Recovery Time

供应链

Country of OriginGermany, Hungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-06-23

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon FZ2400R17HP4B29BOSA2 的描述。

1700 V, 2400 A single switch IGBT module, AG-IHMB190-1-9, RoHS

Infineon SCT

TRANSISTOR, IGBT MODULE, 1.7KV, 2.4KA; Transistor Polarity: N Channel; DC Collector Current: 2.4kA; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 15.5kW; Collector Emitter Voltage V(br)ceo: 1.7kV;

Farnell

Igbt, Single Switch, 1.7Kv/2.4Ka, Module; Continuous Collector Current:2.4Ka; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:15.5Kw; Operating Temperature Max:150°C; Igbt Termination:Tab; Transistor Mounting:Panel Rohs Compliant: Yes |Infineon Technologies FZ2400R17HP4B29BOSA2

Newark

1700V IHMB 190mm single switch IGBT Module with soft-switching Trench-IGBT4 and bigger housing - The best solution for your traction and industry applications | Summary of Features: Extended Operation Temperature T(vj op); Enlarged Diode for regenerative operation; Low V(CEsat); 4kV AC 1min Insulation; AlSiC Base Plate for increasing Thermal Cycling Capability; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; UL recognised | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; traction; cav

Infineon