Infineon FS50R12KE3

Name: Infineon FS50R12KE3
Brand: Infineon
SKU: FS50R12KE3

Trans IGBT Module N-CH 1200V 75A 270000mW 28-Pin ECONO 2 Tray

Production

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Worldway Electronics	FS50R12KE3	16,792	7	Tape & Reel		102.77	99.627	94.384	94.384	21h
IC Components Ltd.	FS50R12KE3	36,400			60.300	60.300	60.300	60.300	60.300	1d
YIC International	FS50R12KE3	36,300			60.120	60.120	60.120	60.120	60.120	4d
SHENGYU ELECTRONICS	FS50R12KE3	14,699	1		28.882	28.304	27.440	26.570	25.420	4d
Run Hong Electronics	FS50R12KE3	7,928			91.548	91.548	91.548	91.548	91.548	9h

数据表和文档

下载 Infineon FS50R12KE3 的数据表和制造商文档。

IHS

Datasheet9 页23 年前

Elcodis

iiiC

库存历史记录

3 个月趋势:

-2.94%

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供应链

Country of OriginHungary

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-02-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon FS50R12KE3 的描述。

Trans IGBT Module N-CH 1200V 75A 270000mW 28-Pin ECONO 2 Tray

Verical

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel

IHS

IGBT - Standard Modules 1200V 50A 3-PHASE

Mouser

IC MCU 32BIT 32KB FLASH 32TQFP

YIC International

IGBT MODULE, 1200V, ECONOPACK2; Transistor Type:3-Phase Bridge + NTC Thermistor; Voltage, Vces:1200V; Current Ic Continuous a Max:50A; Voltage, Vce Sat Max:2.15V; Power Dissipation:270W; Case Style:Econopack 2; Termination Type:Solder; Operating Temperature Range:-40°C to +125°C; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:100A; Power, Pd:270W; Temperature, Current:80°C; Temperature, Full Power Rating:25°C; Transistors, No. of:6; Voltage, Vce Sat Typ:1.7V

Farnell

IGBT module Connection: Soldering pins Fastening: 4 x M2 Configuration: 3-phasig Housing type: EconoPACK™2 Collector-emitter saturation voltage: 2.15 V Energy dissipation during make-time: 5 mJ Energy dissipation during turn-off time: 6.5 mJ

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