供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-04-30
LTD Date2014-10-31
描述
由其分销商提供的 Infineon F4-50R12MS4 的描述。
Trans IGBT Module N-CH 1200V 70A 355000mW 14-Pin ECONOD-2 Tray
Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel
IGBT, 70A, 1200V, N-CHANNEL
70 A 1200 V N-CHANNEL IGBT
F450R12 - IGBT MODULE '
IGBT, POW, QUAD WITH NTC, 1200V, 50A; Module Configuration:Quad; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Voltage Vces:3.2V; Power Dissipation Pd:355W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:14; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:355W
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageModule
MountScrew
Number of Pins14
Number of Terminals14
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage3.75 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current70 A
Max Collector Current70 A
Max Junction Temperature (Tj)125 °C
Max Operating Temperature150 °C
Max Power Dissipation355 W
Min Operating Temperature-40 °C
Number of Elements4
Power Dissipation355 W
Turn-Off Delay Time310 ns
Turn-On Delay Time120 ns
Dimensions
Height17.5 mm