Infineon BSZ058N03MSGATMA1

Name: Infineon BSZ058N03MSGATMA1
Brand: Infineon
SKU: BSZ058N03MSGATMA1

Trans Mosfet N-ch 30V 14A 8-PIN Tsdson Ep T/r

$ 0.33

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Rochester Electronics		BSZ058N03MSGATMA1	44,752					0.397	0.330	0.294	5h
Farnell		BSZ058N03MSGATMA1	0	1		1.309*	1.309*	0.842*	0.588*	0.588*	6h
Verical	5	BSZ058N03MSGATMA1	25,289	839					0.412	0.368
Win Source	2	WS-BSZ058N03MSGATMA1	46,000	40				1.343	1.091	1.091	6h
Worldway Electronics		BSZ058N03MSGATMA1	14,676	7	Tape & Reel		0.093	0.090	0.086	0.086	5h

数据表和文档

下载 Infineon BSZ058N03MSGATMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

Farnell

库存历史记录

3 个月趋势:

-4.28%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon BSZ058N03MSGATMA1 的描述。

Trans MOSFET N-CH 30V 14A 8-Pin TSDSON EP T/R

Verical

40 A 30 V 0.0064 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

Power Field-Effect Transistor, 40A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

BSZ058N03 12V-300V N-CHANNEL POWER MOSF;

Farnell

MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:45W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon