Infineon BSZ050N03LSGATMA1

Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8

Trans MOSFET N-CH 30V 16A 8-Pin TSDSON T/R

30V 16A 2.1W 5m´Î@10V20A 2.2V@250Ã×A N Channel PG-TSDSON-8 MOSFETs ROHS

40 A 30 V 0.0078 ohm N-CHANNEL Si POWER MOSFET

Power Field-Effect Transistor, 40A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET N-Ch 16A 30V OptiMOS3 TSDSON8EP

2.1W(Ta),50W(Tc) 20V 2.2V@ 250¦ÌA 35nC@ 10 V 1N 30V 5m¦¸@ 20A,10V 40A 2.8nF@15V SON 3.3mm*3.3mm*1.1mm

BSZ050N03 - 12V-300V N-CHANNEL P

MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)