With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
MOSFET, N-CH, 25V, 40A, TSDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.003ohm; ; Available until stocks are exhausted Alternative available
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 25 / ON Resistance (Rds(on)) mOhm = 5.1 / Gate-Source Voltage V = 20 / Fall Time ns = 2.2 / Rise Time ns = 2.8 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 3.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TDSON-8 FL / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 37