Infineon BSZ035N03MSGATMA1

Name: Infineon BSZ035N03MSGATMA1
Brand: Infineon
SKU: BSZ035N03MSGATMA1

Power MOSFET, N Channel, 30 V, 40 A, 0.0035 ohm, PG-TSDSON, Surface Mount

$ 0.414

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	BSZ035N03MSGATMA1	9,365	1		0.435	0.435	0.435	0.435	0.435
Rochester Electronics		BSZ035N03MSGATMA1	52,239					0.417	0.346	0.309	21h
DigiKey	2	BSZ035N03MSGATMA1CT-ND	4,998	1	Cut Tape	1.450	0.916	0.607	0.431	0.395
Newark		BSZ035N03MSGATMA1	0	1	Cut Tape	1.400	0.882	0.583	0.414	0.414
Avnet		BSZ035N03MSGATMA1	0	5K						0.298	4d

数据表和文档

下载 Infineon BSZ035N03MSGATMA1 的数据表和制造商文档。

Upverter

Datasheet9 页11 年前

_legacy Avnet

iiiC

库存历史记录

3 个月趋势:

-0.06%

CAD 模型

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-10-30

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon BSZ035N03MSGATMA1 的描述。

Power MOSFET, N Channel, 30 V, 40 A, 0.0035 ohm, PG-TSDSON, Surface Mount

EBV Elektronik

Transistor MOSFET N-CH 30V 40A 8-Pin PG-TSDSON T/R

Avnet Japan

MOSFET, N CH, 40A, 30V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon