供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonBSP170PL6327HTSA1
MOSFET P-CH 60V 1.9A SOT223-4 / P-Channel 60 V 1.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
InfineonBSP295H6327XTSA1
Power MOSFET, N Channel, 60 V, 1.8 A, 300 Milliohms, SOT-223, 4 Pins, Surface Mount
Diodes Inc.ZXMP6A13GTA
Power MOSFET, Enhancement Mode, P Channel, 60 V, 1.7 A, 0.39 ohm, SOT-223, Surface Mount
InfineonBSP716NH6327XTSA1
INFINEON SMD MOSFET NFET 75V 2,3A 13,9mΩ 150°C SOT-223 BSP716NH6327XTSA1
描述
由其分销商提供的 Infineon BSP295L6327HTSA1 的描述。
Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP295 SIPMOS SMALL-SIGNAL N-CHANNEL;
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1.8 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance368 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.8 W
Manufacturer Package IdentifierPG-SOT223-4
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation1.8 W
Rds On Max300 mΩ
Rise Time9.9 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time5.4 ns
Dimensions
Height1.8 mm