价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | BSO040N03MSGXUMA1 | 13,266 | 23h | |||||||||
| DigiKey | 448-BSO040N03MSGXUMA1CT-ND | 340 | 1 | Cut Tape | ||||||||
| Mouser | 726-BSO040N03MSG | 6 | 1 | Tape & Reel | ||||||||
| Win Source | WS-BSO040N03MS G | 3,500 | 35 | 1d | ||||||||
| Worldway Electronics | BSO040N03MSGXUMA1 | 11,193 | 7 | Tape & Reel | 23h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
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MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
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Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon BSO040N03MSGXUMA1 的描述。
Trans MOSFET N-CH 30V 16A 8-Pin DSO T/R
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch 30V 20A DSO-8 OptiMOS 3M
BSO040N03MS - 30V N-CHANNEL POWE
Mosfet, N-Ch, 30V, 16A, Soic; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes |Infineon BSO040N03MSGXUMA1
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)14 A
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)30 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.3 nF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max4 mΩ
Rise Time9 ns
Schedule B8541290080