Infineon BSC123N10LSGATMA1

Name: Infineon BSC123N10LSGATMA1
Brand: Infineon
SKU: BSC123N10LSGATMA1

Trans MOSFET N-CH 100V 10.6A Automotive 8-Pin TDSON EP

$ 0.812

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	BSC123N10LSGATMA1	15,311					0.844	0.700	0.625	18h
DigiKey	3	BSC123N10LSGATMA1CT-ND	2,857	1	Cut Tape	2.830	1.814	1.234	0.906	0.838
Arrow Electronics		BSC123N10LSGATMA1	1	1		1.810	1.810	1.810	1.810	1.810
Mouser	2	726-BSC123N10LSG	17,298	1	Tape & Reel	2.590	1.640	1.110	0.803	0.716
Microchip USA		BSC123N10LSGATMA1	2,681	600					1.760	1.760	12h

数据表和文档

下载 Infineon BSC123N10LSGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

_legacy Avnet

iiiC

Arrow Electronics

库存历史记录

3 个月趋势:

+5.07%

CAD 模型

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来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-07-14

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon BSC123N10LSGATMA1 的描述。

Trans MOSFET N-CH 100V 10.6A Automotive 8-Pin TDSON EP

Verical

Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC