onsemi FDD86110

Name: onsemi FDD86110
Brand: onsemi
SKU: FDD86110

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ

$ 1.41

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Distributor		SKU		Min	Pkg
Newark	2	FDD86110	2,293	5	Cut Tape		2.730	2.040	1.830	1.830
Verical	3	FDD86110	947	189					1.650	1.475
Arrow Electronics	2	FDD86110	382	1		0.961	0.961	0.961	0.961	0.961
Master Electronics		FDD86110	2,500	25				1.740	1.390	1.120
Onlinecomponents.com		FDD86110	2,500	25	Bulk			1.740	1.390	1.120

数据表和文档

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Upverter

Technical Drawing1 页6 年前

Master Electronics

IHS

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-43.94%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-10-13

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDD86110 的描述。

Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ

onsemi

Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 12.5A DPAK-3

Win Source

Power Field-Effect Transistor, 12.5A I(D), 100V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor

MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell