Infineon BSC100N06LS3GATMA1

Name: Infineon BSC100N06LS3GATMA1
Brand: Infineon
SKU: BSC100N06LS3GATMA1

MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity: N Channel; Continuous Drain

$ 0.593

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	BSC100N06LS3GATMA1	5,000	5K						0.360	8h
Newark		BSC100N06LS3GATMA1	76,669	1		1.810	1.190	0.836	0.637	0.629
Arrow Electronics	2	BSC100N06LS3GATMA1	11,223	1		1.265	1.265	1.265	1.265	1.265
Future Electronics	2	BSC100N06LS3GATMA1	70,000	5K	Tape & Reel					0.430
Rutronik		TMOSP9056	5,000	5K						0.325	14h

数据表和文档

下载 Infineon BSC100N06LS3GATMA1 的数据表和制造商文档。

Newark

Datasheet9 页12 年前

IHS

element14 APAC

TME

iiiC

库存历史记录

3 个月趋势:

+0.29%

CAD 模型

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-12-19

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon BSC100N06LS3GATMA1 的描述。

MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain

Newark

OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R

Win Source

Power MOSFET, N Channel, 60 V, 55 A, 10 Milliohms, TDSON, 8 Pins, Surface Mount

Avnet

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Infineon

MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

Farnell