供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiNTB18N06T4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 15A Tc 15A 48.4W 13ns
STMicroelectronicsSTD16NF06T4
STMicroelectronics N-Ch Enhancement MOSFET STripFET Series Vds=60V 16A DPAK (TO-252) SMD 3-Pin
描述
由其分销商提供的 onsemi FDMS86520 的描述。
N-Channel PowerTrench® MOSFET 60V, 42A, 7.4mΩ
MOSFET, N-CH, 60V, 42A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.6V; Power
Power Field-Effect Transistor, 14A I(D), 60V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
2.5W(Ta)，69W(Tc) 20V 4.5V@ 250µA 40nC@ 10 V 1individualNChannel 60V 7.4mΩ@ 14A,10V 14A，42A 2.85nF@30V QFN SMD mount 6mm*5mm*1.1mm
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch noderinging of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimizedfor low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight68.1 mg
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.85 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation69 W
Rds On Max7.4 mΩ
Rise Time6.7 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1 mm
Length5.1 mm
Width6.25 mm