供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-02-28
LTD Date2013-08-31
相关零件
InfineonBSC079N03LSCGATMA1
Surface Mount Ceramic Multilayer Capacitor 0.0015uF 5% C0G 50V 0805 Paper T/R
描述
由其分销商提供的 Infineon BSC100N03LSG 的描述。
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MOSFET, N CH, 44A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:44A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.2 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max10 mΩ
Rise Time2.6 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time3 ns
Dimensions
Height1.1 mm
Length5.35 mm
Width6.1 mm