Infineon BSC0921NDIATMA1

Name: Infineon BSC0921NDIATMA1
Brand: Infineon
SKU: BSC0921NDIATMA1

Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin TISON T/R

$ 0.666

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Distributor		SKU		Min	Pkg
Avnet	2	13AC8337	411	1		1.980	1.300	0.937	0.746	0.746	1d
Newark		BSC0921NDIATMA1	411	1	Cut Tape	1.980	1.300	0.937	0.670	0.670
Future Electronics	2	BSC0921NDIATMA1	10,000	5K	Tape & Reel					0.515
Rochester Electronics		BSC0921NDIATMA1	39,663					0.734	0.610	0.544	22h
Arrow Electronics	2	BSC0921NDIATMA1	5,104	1		1.684	1.183	0.887	0.628	0.542

数据表和文档

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IHS

Datasheet14 页12 年前

库存历史记录

3 个月趋势:

-3.24%

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供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-04-24

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon BSC0921NDIATMA1 的描述。

Transistor MOSFET Array Dual N-CH 30V 40A 8-Pin TISON T/R

EBV Elektronik

2.5W 20V 2V 5.9nC@ 4.5V @ Q1,22nC@ 4.5V @ Q2 1N,2N 30V 5m¦¸@ 10V @ Q 1,1.6m¦¸@ 10V @ Q 2m¦¸ 40A 770pF@ 15V @ Q 1,2.7nF@ 15V @ Q 2 SON , 5.9mm*5.15mm*1.27mm

UnikeyIC

MOSFET, DUAL N-CH, 30V, 40A, TISON; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 3.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

Farnell

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon

Mosfet, N-Ch, 30V, 40A, 150Deg C, 2.5W; Channel Type:N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:40A; Continuous Drain Current Id P Channel:40A Rohs Compliant: Yes |Infineon Technologies BSC0921NDIATMA1

Newark