Infineon BSC082N10LSGATMA1

Name: Infineon BSC082N10LSGATMA1
Brand: Infineon
SKU: BSC082N10LSGATMA1

Trans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP

$ 1.689

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSC082N10LSGATMA1	3,504					1.590	1.320	1.180	22m
DigiKey	3	BSC082N10LSGATMA1CT-ND	166	1	Cut Tape	4.510	2.946	2.058	2.058	2.058
Avnet		BSC082N10LSGATMA1	0	5K							1d
Microchip USA		BSC082N10LSGATMA1	2,695	600					2.800	2.800	19h
Win Source	2	WS-BSC082N10LSGATMA1	15,100	29				1.578	1.353	1.353	1h

数据表和文档

下载 Infineon BSC082N10LSGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Factory Futures

库存历史记录

3 个月趋势:

-13.07%

CAD 模型

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来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-10-01

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon BSC082N10LSGATMA1 的描述。

Trans MOSFET N-CH 100V 13.8A Automotive 8-Pin TDSON EP

Verical

Power Field-Effect Transistor, 13.8A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

MOSFET, N CH, 100A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC