Infineon BSC027N04LSGATMA1

Name: Infineon BSC027N04LSGATMA1
Brand: Infineon
SKU: BSC027N04LSGATMA1

Power MOSFET, N Channel, 40 V, 100 A, 0.0023 ohm, PG-TDSON, Surface Mount

$ 0.454

NRND

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Avnet	2	BSC027N04LSGATMA1	5,000	5K						0.343	16h
Newark		BSC027N04LSGATMA1	9,883	1	Cut Tape	1.510	0.959	0.638	0.454	0.454
Arrow Electronics	2	BSC027N04LSGATMA1	52,357	1		0.443	0.443	0.443	0.443	0.443
Future Electronics	2	BSC027N04LSGATMA1	75,000	5K	Tape & Reel					0.360
DigiKey	3	BSC027N04LSGATMA1CT-ND	9,374	1	Cut Tape	1.580	0.996	0.662	0.473	0.434

数据表和文档

下载 Infineon BSC027N04LSGATMA1 的数据表和制造商文档。

Farnell

Datasheet10 页16 年前

_legacy Avnet

Newark

iiiC

库存历史记录

3 个月趋势:

-8.32%

CAD 模型

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-12-11

Lifecycle StatusNRND (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon BSC027N04LSGATMA1 的描述。

Power MOSFET, N Channel, 40 V, 100 A, 0.0023 ohm, PG-TDSON, Surface Mount

EBV Elektronik

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 100A, 40V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:83W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC