Infineon BSC016N04LSGATMA1

Name: Infineon BSC016N04LSGATMA1
Brand: Infineon
SKU: BSC016N04LSGATMA1

MOSFET Transistor, N Channel, 100 A, 40 V, 1.3 mohm, 10 V

$ 1.25

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSC016N04LSGATMA1	3,520					1.500	1.250	1.110	1d
Farnell	3	BSC016N04LS G	0	1		3.385*	3.385*	1.893*	1.173*	1.173*	11h
Verical	2	BSC016N04LSGATMA1	2,524	200					1.563	1.388
Component Stockers USA		BSC016N04LSGATMA1	98			5.110	4.510	4.510	4.510	4.510	>1wk
Weyland Electronics Group Pte. Ltd.		BSC016N04LSG	24,762	1	Tape & Reel	0.598	0.598	0.598	0.598	0.598	2d

数据表和文档

下载 Infineon BSC016N04LSGATMA1 的数据表和制造商文档。

Newark

Datasheet10 页15 年前

Farnell

_legacy Avnet

iiiC

库存历史记录

3 个月趋势:

-14.24%

CAD 模型

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来源	eCAD	文件
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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-12-14

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

描述

由其分销商提供的 Infineon BSC016N04LSGATMA1 的描述。

MOSFET Transistor, N Channel, 100 A, 40 V, 1.3 mohm, 10 V

Newark

2.5KW 20V 1.2V 113nC@ 10V 1N 40V 1.6m¦¸@ 10V 100A 8.9nF@ 20V TDSON(EP) , 5.15mm*590cm*1mm

UnikeyIC

MOSFET Devices; INFINEON; BSC016N04LSGATMA1; 40 V; 31 A; 20 V; 139 W

Maritex

40V 100A 139W 2.3mΩ@4.5V,50A 2V@85uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

ODG (Origin Data Global)

Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R

Jak Electronics

Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFETs N-Ch 40V 100A TDSON-8 OptiMOS 3

Win Source

Analog to digital conversion chip ADC

Weyland Electronics Group Pte. Ltd.

OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 100A, 40V, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -;

Farnell