Infineon BSC014N03LSGATMA1

Name: Infineon BSC014N03LSGATMA1
Brand: Infineon
SKU: BSC014N03LSGATMA1

Trans MOSFET N-CH 30V 34A 8-Pin TDSON EP

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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查看所有价格优惠

Distributor		SKU		Min	Pkg
Farnell	3	BSC014N03LSGATMA1	0	1	Cut Tape	0.797*	0.756*	0.714*	0.632*	0.632*	1d
Win Source	2	WS-BSC014N03LSGATMA1	28,010	30				1.790	1.502	1.502	2h
Worldway Electronics		BSC014N03LSGATMA1	19,374	7	Tape & Reel		0.576	0.559	0.529	0.529	1d
ICPartonline		BSC014N03LS G	15,229			5.000	4.750	4.500	4.250	4.000	>1wk
IC Components Ltd.		BSC014N03LSGATMA1	1,000,100			10.410	10.410	10.410	10.410	10.410	2d

数据表和文档

下载 Infineon BSC014N03LSGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

element14 APAC

_legacy Avnet

iiiC

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-10-03

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon BSC014N03LSGATMA1 的描述。

Trans MOSFET N-CH 30V 34A 8-Pin TDSON EP

Verical

Power Field-Effect Transistor, 34A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

BSC014N03 - 12V-300V N-CHANNEL P

DigiKey Marketplace

BSC014N03LSG INFINEON PG-TDSON-8

IC Components Ltd.

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -;

Farnell

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon