Infineon BSC011N03LSATMA1

Name: Infineon BSC011N03LSATMA1
Brand: Infineon
SKU: BSC011N03LSATMA1

2.5KW 20V 2V 72NC 1N 30V 1.1M¦¸@ 10V 100A 4.7NF@ 15V Tdson(ep) , 5.15MM*590CM*1MM

$ 0.674

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		BSC011N03LSATMA1	5,310	1	Cut Tape	2.110	1.360	0.938	0.694	0.694
Arrow Electronics	2	BSC011N03LSATMA1	9,765	1		0.637	0.637	0.637	0.637	0.637
Future Electronics	2	BSC011N03LSATMA1	25,000	5K	Tape & Reel					0.565
Rutronik		TMOSP10580	5,000	5K						0.587	2h
Rochester Electronics		BSC011N03LSATMA1	2,638					0.748	0.621	0.553	19h

数据表和文档

下载 Infineon BSC011N03LSATMA1 的数据表和制造商文档。

Newark

Datasheet10 页12 年前

IHS

Factory Futures

iiiC

Arrow Electronics

库存历史记录

3 个月趋势:

+17.56%

CAD 模型

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供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-03-17

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon BSC011N03LSATMA1 的描述。

2.5KW 20V 2V 72nC 1N 30V 1.1m¦¸@ 10V 100A 4.7nF@ 15V TDSON(EP) , 5.15mm*590cm*1mm

Unikeyic (ICkey)

Trans MOSFET N-CH 30V 37A 8-Pin TDSON T/R

Avnet

MOSFETs; BSC011N03LS; INFINEON TECHNOLOGIES; 30 V; 37 A; 20 V; 96 W

Maritex

MOSFET N-Channel 30V 37A OptiMOS TDSON8

RS APAC

Power Field-Effect Transistor, 204A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

OptiMOS™ 30V in SuperSO8 package, PG-TDSON-8, RoHS

Infineon SCT

Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:96W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies BSC011N03LSATMA1.

Newark

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6).

Infineon