Infineon BSC010NE2LSATMA1

Name: Infineon BSC010NE2LSATMA1
Brand: Infineon
SKU: BSC010NE2LSATMA1

Transistor, Mosfet, N-channel, 25V, 39A, 1.0 Mohm, 242A, 33 Nc, TSDSON8

$ 0.75

Production

制造商页面数据表

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Distributor		SKU		Min	Pkg
Avnet	2	47Y7990	8,213	1		2.020	1.290	0.866	0.866	0.866	17h
Newark	2	BSC010NE2LSATMA1	8,213	1	Cut Tape	0.797	0.797	0.797	0.797	0.797
Rutronik		TMOSP10522	10,000	5K						0.573	22h
RS (Formerly Allied Electronics)		BSC010NE2LS	10	1	Bulk	0.340	0.340	0.340	0.340	0.340	4h
Arrow Electronics	3	BSC010NE2LSATMA1	28,380	1		2.148	1.377	1.059	0.738	0.688

数据表和文档

下载 Infineon BSC010NE2LSATMA1 的数据表和制造商文档。

IHS

Datasheet10 页13 年前

Farnell

_legacy Avnet

库存历史记录

3 个月趋势:

-44.97%

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InfineonBSC010NE2LSATMA1

InfineonBSC010NE2LSIATMA1

Price @ 1000

$ 0.75

$ 0.788

Stock

1,911,381

2,853,560

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

25 V

Continuous Drain Current (ID)

40 A

38 A

Threshold Voltage

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

96 W

Input Capacitance

4.7 nF

4.2 nF

供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-24

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon BSC010NE2LSATMA1 的描述。

TRANSISTOR, MOSFET, N-CHANNEL, 25V, 39A, 1.0 MOHM, 242A, 33 NC, TSDSON8

RS (Formerly Allied Electronics)

MOSFET N-CH 25V 39A TDSON-8 / Trans MOSFET N-CH 25V 39A Automotive 8-Pin TDSON EP T/R

Win Source

Single N-Channel 25 V 96 W 85 nC OptiMOS Surface Mount Mosfet - TDSON-8

Future Electronics

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:96W; No. of Pins:8Pins RoHS Compliant: Yes

Newark