价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | BSC009NE2LS5ATMA1CT-ND | 13,395 | 1 | Cut Tape | ||||||||
| Newark | BSC009NE2LS5ATMA1 | 195 | 1 | Cut Tape | ||||||||
| Future Electronics | BSC009NE2LS5ATMA1 | 20,000 | 5K | Tape & Reel | ||||||||
| Arrow Electronics | BSC009NE2LS5ATMA1 | 11,891 | 1 | |||||||||
| Rutronik | TMOS3589 | 5,000 | 5K | 35m |
供应链
Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-03-10
Lifecycle StatusProduction (Last Updated: 1 month ago)
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描述
由其分销商提供的 Infineon BSC009NE2LS5ATMA1 的描述。
Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R
MOSFETs; BSC009NE2LS5ATMA1; INFINEON TECHNOLOGIES; 25 V; 41 A; 16 V; 2.5 W
Infineon NMOS OptiMOS 5, Vds=25 V, 100 A, SuperSO8 5 x 6, , 8
MOSFET OptiMOS5 25V 100A 0.9m SuperSO8
Power Field-Effect Transistor, 223A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CH 25V 100A 900mOhm SuperSO8
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.
Mosfet, N-Ch, 25V, 100A, 150Deg C, 74W; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Infineon Technologies BSC009NE2LS5ATMA1
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)41 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time19 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.9 nF
Max Dual Supply Voltage25 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance900 µΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max900 µΩ
Rise Time33 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time4 ns
Dimensions
Height1.1 mm
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
合规声明