Infineon BF999E6327HTSA1

Name: Infineon BF999E6327HTSA1
Brand: Infineon
SKU: BF999E6327HTSA1

Power LDMOS Transistor N-Channel 20V 0.03A 3-Pin SOT-23 T/R

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	BF999E6327HTSA1	0	5	Cut Tape		0.379*	0.195*	0.195*	0.195*	13h
Win Source	2	WS-BF999E6327HTSA1	155,240	24				1.710	1.434	1.434	14h
Worldway Electronics	5	BF 999 E6327	18,363	7			0.109	0.107	0.103	0.101	18h
Fmall Co., Limited		BF999E6327HTSA1	28,520			0.124	0.124	0.116	0.110	0.100	>1wk
UnikeyIC		BF999 E6327	24,000	3K						0.177	3d

数据表和文档

下载 Infineon BF999E6327HTSA1 的数据表和制造商文档。

IHS

Datasheet6 页19 年前

Datasheet5 页0 年前

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-02-01

Lifecycle StatusObsolete (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon BF999E6327HTSA1 的描述。

Power LDMOS Transistor N-Channel 20V 0.03A 3-Pin SOT-23 T/R

Avnet

Trans RF MOSFET N-CH 20V 0.03A Automotive 3-Pin SOT-23 T/R

Future Electronics

Infineon Technologies BF999 MOSFET 1 N-channel 200 mW TO 236 3

Utmel Electronic

Silicon N-Channel MOSFET Triode

Infineon

DEPLETION MODE SOT-23 , 2.9mm*1.3mm*1mm

Unikeyic (ICkey)

MOSFET, N-CH, AEC-Q101, 20V, SOT23

element14 APAC

VHF BAND Si N-CHANNEL RF SMALL SIGNAL MOSFET

Component Stockers USA

MOSFET N-CH RF 20V 30MA SOT-23

Vigor Components

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

IHS

Mosfet, N-Ch, Aec-Q101, 20V, Sot23; Transistor Polarity:n Channel; Continuous Drain Current Id:30Ma; Drain Source Voltage Vds:20V; On Resistance Rds(On):-; Rds(On) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Rohs Compliant: Yes

Newark