Infineon BF5030WH6327XTSA1

Name: Infineon BF5030WH6327XTSA1
Brand: Infineon
SKU: BF5030WH6327XTSA1

Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-343 T/R

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min
Component Stockers USA		BF5030WH6327XTSA1	246		99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	2	WS-BF5030W	218,600	70			0.833	0.556	0.556	20h
Worldway Electronics	4	BF5030W H6327	18,841	7		0.047	0.046	0.045	0.044	19h
Aztech		BF5030WH6327XTSA1	335		7.860	7.860	7.860	7.860	7.860	14h
Fly-Wing Technology		BF5030WH6327XTSA1	317,835		0.685	0.562	0.544	0.509	0.509	18h

数据表和文档

下载 Infineon BF5030WH6327XTSA1 的数据表和制造商文档。

Arrow Electronics

Datasheet13 页17 年前

TME

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-05-05

Lifecycle StatusObsolete (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon BF5030WH6327XTSA1 的描述。

Trans RF MOSFET N-CH 8V 0.025A Automotive 4-Pin(3+Tab) SOT-343 T/R

Verical

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET

IHS

Silicon N-Channel MOSFET Tetrode, SOT343, RoHS

Infineon SCT

Mosfet, N-Ch, Aec-Q101, 8V, Sot343

Newark

BF5030 POWER FIELD-EFFECT TRANSISTOR, N;

Farnell

Silicon N-Channel MOSFET Tetrode | Summary of Features: Designed for input stages of UHF- and VHF-tuners with AGC function; Supporting 5 V operations and power saving 3 V operations; Integrated ESD gate protection diodes; Very low noise figure; High gain, high forward transadmittance; Very good cross modulation at gain reduction; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Set Top Box; TV

Infineon