Infineon BCV61CE6327HTSA1

Name: Infineon BCV61CE6327HTSA1
Brand: Infineon
SKU: BCV61CE6327HTSA1

BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4

$ 0.36

EOL

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Distributor		SKU		Min	Pkg
Newark	2	BCV61CE6327HTSA1	7,933	5	Cut Tape	0.618	0.618	0.618	0.618
Rochester Electronics		BCV61CE6327HTSA1	764,560				0.134	0.112	0.100	19h
Avnet		BCV61CE6327HTSA1	0	9K					0.098	21h
Future Electronics	2	BCV61CE6327HTSA1	0	3K	Tape & Reel				0.101
Arrow Electronics		BCV61CE6327HTSA1	0	9K					0.100

数据表和文档

下载 Infineon BCV61CE6327HTSA1 的数据表和制造商文档。

IHS

Datasheet7 页14 年前

Farnell

iiiC

库存历史记录

3 个月趋势:

-6.15%

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备用零件

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InfineonBCV61CE6327HTSA1

NexperiaBCV61C,215

Price @ 1000

$ 0.36

$ 0.348

Stock

3,044,011

1,459,879

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-143-4

TO-253-4

Polarity

NPN

Collector Emitter Breakdown Voltage

30 V

Max Collector Current

100 mA

Transition Frequency

250 MHz

100 MHz

Collector Emitter Saturation Voltage

600 mV

hFE Min

420

110

Power Dissipation

300 mW

250 mW

供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1991-05-01

Lifecycle StatusEOL (Last Updated: 4 months ago)

LTB Date2015-10-15

LTD Date2016-10-15

描述

由其分销商提供的 Infineon BCV61CE6327HTSA1 的描述。

BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4

Future Electronics

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

IHS

Dual Transistor BJT NPN 30V 0.1A SOT143

RS APAC

Trans GP BJT NPN 30V 0.1A 4-Pin SOT-143 T/R

Avnet

; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:300mW; DC Current Gain Min (hfe):110 ;RoHS Compliant: Yes

Newark

NPN Silicon Double Transistor | Summary of Features: To be used as a current mirror; Good thermal coupling and VBE matching; High current gain; Low collector-emitter saturation voltage; Pb-free (RoHS compliant) package; Qualified according AEC Q102 | Target Applications: For current mirror applications

Infineon

Transistor Polarity = NPN / Channels = 2 / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-143 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Length mm = 2.9 / Width mm = 1.3 / Height mm = 1 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 200 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900

Distrelec

TRANSISTOR, DUAL, NPN, SOT-143; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520; Transistor Case Style:SOT-143; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:110; No. of Transistors:2; Package / Case:SOT-143; Pin Configuration:a; Power Dissipation Pd:300mW; Power Dissipation Ptot Max:300mW; SMD Marking:1Ls; Termination Type:SMD; Voltage Vcbo:30V

element14 APAC