Infineon BCV47E6327HTSA1

Name: Infineon BCV47E6327HTSA1
Brand: Infineon
SKU: BCV47E6327HTSA1

BCV47 Series NPN 60 V 500 mA SMT Silicon Darlington Transistor - SOT-23-3

$ 0.378

EOL

制造商页面数据表

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Distributor		SKU	Min	Pkg
Newark		BCV47E6327HTSA1	5	Cut Tape	0.378	0.378	0.378	0.378
Avnet		BCV47E6327HTSA1	18K						2d
Future Electronics	2	BCV47E6327HTSA1	3K	Tape & Reel				0.066
Arrow Electronics		BCV47E6327HTSA1	18K
Farnell	2	BCV47E6327HTSA1	5	Cut Tape	0.413*	0.288*	0.150*	0.126*	16h

数据表和文档

下载 Infineon BCV47E6327HTSA1 的数据表和制造商文档。

IHS

Datasheet7 页14 年前

Datasheet8 页19 年前

iiiC

Sierra IC

DigiKey

库存历史记录

3 个月趋势:

+22.65%

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备用零件

此零件

备用零件

InfineonBCV47E6327HTSA1

Diodes Inc.BCV47TA

Price @ 1000

$ 0.378

$ 0.096

Stock

3,918,156

1,541,418

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT

SOT-23

Polarity

NPN

Collector Emitter Breakdown Voltage

60 V

Max Collector Current

500 mA

Transition Frequency

170 MHz

Collector Emitter Saturation Voltage

1 V

hFE Min

2000

Power Dissipation

360 mW

供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-02-01

Lifecycle StatusEOL (Last Updated: 4 months ago)

LTB Date2023-09-30

LTD Date2024-09-30

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描述

由其分销商提供的 Infineon BCV47E6327HTSA1 的描述。

BCV47 Series NPN 60 V 500 mA SMT Silicon Darlington Transistor - SOT-23-3

Future Electronics

Trans Darlington NPN 60V 0.5A 360mW Automotive 3-Pin SOT-23 T/R

Verical

NPN SILICON DARLINGTON TRANSISTOR Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon

ComSIT Distribution GmbH

1V @IC = 500 mA; IB = 50 mA; Tamb = 25 ¡ãC NPN 360mW 10V 100nA 80V 60V 500mA SOT-23 2.9mm*1.3mm*1mm

UnikeyIC

PNP Silicon Darlington Transistors | Summary of Features: High collector current; High current gain; Complementary types: BCV26, BCV46 (PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: For general AF applications

Infineon

TRANSISTOR, BIPOLAR, NPN, 60V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 170MHz; Power Dissipation Pd: 360mW; DC Collector Current: 500mA; DC Current Gain hFE: 2000hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell