供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-01-31
LTD Date2019-07-31
相关零件
InfineonIPP70N04S406AKSA1
40V, N-Ch, 6.5 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
描述
由其分销商提供的 Infineon AUIRF3504 的描述。
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 87A 3-Pin(3+Tab) TO-220AB Tube
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)87 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9.2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance9.2 mΩ
Package Quantity1000
Power Dissipation143 W
Rds On Max9.2 mΩ
Rise Time61 ns
Threshold Voltage2 V
Turn-Off Delay Time24 ns
Turn-On Delay Time9.9 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm