onsemi IRFW630BTM_FP001

Name: onsemi IRFW630BTM_FP001
Brand: onsemi
SKU: IRFW630BTM_FP001

Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R

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价格与库存

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Distributor	SKU		Min
Component Stockers USA	IRFW630BTM_FP001	2,059		0.430	0.430	0.400	0.400	0.400	3d
Worldway Electronics	IRFW630BTM_FP001	14,750	7		0.549	0.532	0.504	0.504	1d
Classic Components	IRFW630BTM_FP001	37							2d
QUARKTWIN TECHNOLOGY LTD	IRFW630BTM_FP001	联系方式		0.360	0.324	0.292	0.237	0.213	>1wk
Klychip	IRFW630BTM_FP001	联系方式	1	0.430	0.430	0.409	0.409	0.409	>1wk

数据表和文档

下载 onsemi IRFW630BTM_FP001 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

onsemi

Newark

Fairchild Semiconductor

Jameco

描述

由其分销商提供的 onsemi IRFW630BTM_FP001 的描述。

Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R

Verical

N-CH/200V/9A/0.4OHM/Substitute of IRFW630ATM

Master Electronics

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

200V N-Channel B-FET / Substitute of IRFW630A

Onlinecomponents.com

FAIRCHILD ,IRFW630BTM_FP001 <NV

Jameco

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: Yes

Newark

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.