供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-06-03
LTD Date2010-12-03
描述
由其分销商提供的 onsemi FDS2170N7 的描述。
MOSFET N-CH 200V 3A 8-SOIC
Power Field-Effect Transistor, 3A I(D), 200V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
200V/20V, 128MO, NCH, SINGLE, SO8B, 1000A GOX, PTI
MOSFET, N, SMD, FLMP, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3A; Resistance, Rds On:0.128ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:3mW; Voltage, Vds Max:200V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Terminals8
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance128 mΩ
Drain to Source Voltage (Vdss)200 V
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.292 nF
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation3 W
Rds On Max128 mΩ
Rise Time5 ns
Turn-Off Delay Time30 ns
Voltage Rating (DC)200 V