onsemi FDP15N65
$ 1.2
Obsolete
价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | FDP15N65 | 163 | 4h | |||||||||
| Microchip USA | FDP15N65 | 246 | 300 | Tube | 20h | |||||||
| Component Stockers USA | FDP15N65 | 140 | 18h | |||||||||
| Win Source | WS-FDP15N65 | 6,000 | 30 | 5h | ||||||||
| Worldway Electronics | FDP15N65 | 29,017 | 7 | Tube | 4h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
相关零件
STMicroelectronicsSTP15N80K5
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220 package
STMicroelectronicsSTP15NK50Z
N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220
STMicroelectronicsSTP18N65M2
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
描述
由其分销商提供的 onsemi FDP15N65 的描述。
Power Field-Effect Transistor, 16A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 650V 15A TO220-3
N-CHANNEL POWER MOSFET
MOSFETs SINGLE, N-CH 500V .38OHM SMPS PWR
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance440 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.095 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max440 mΩ
Rise Time125 ns
Turn-Off Delay Time105 ns