供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
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Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
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Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 10.9 Milliohms;ID 51A;D2Pak;PD 82W;VGS +/-20
描述
由其分销商提供的 onsemi FDB24AN06LA0 的描述。
60V,36A,24 OHMS,N-CH POWER TRENCH MOSFET
MOSFETs 60V N-Channel PowerTrench
Power Field-Effect Transistor, 7.8A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N-CH 60V 7.8A/40A TO263AB
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)7.8 A
Current Rating36 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time49 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.85 nF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Rds On Max19 mΩ
Rise Time101 ns
Turn-Off Delay Time28 ns
Voltage Rating (DC)60 V