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Bulk Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 100mA 2V 1A 750mW 120MHz
描述
由其分销商提供的 Diodes Inc. ZXTP2012A 的描述。
ZXTP2012A Series PNP 60 V 1 A Medium Power Transistor Through Hole - TO-92-3
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE | TRANS PNP 60V 3.5A TO92-3
210mV@ 400mA,4A PNP 1W 7V 20nA 100V 60V 3.5A TO-92 4.77mm*2.41mm*4.01mm
Trans GP BJT PNP 60V 3.5A 3-Pin E-Line
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-145 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current-3.5 A
Current Rating-3.5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency120 MHz
Gain Bandwidth Product120 MHz
Max Collector Current3.5 A
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation1 W
Transition Frequency120 MHz
Voltage Rating (DC)-60 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm