供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2011-03-09
LTD Date2011-03-09
相关零件
onsemiKSB1116ALTA
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
onsemiKSB564AYBU
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
描述
由其分销商提供的 onsemi KSB1116AGBU 的描述。
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 100mA 2V 1A 750mW 120MHz
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
PNP 750 mW 60 V 1 A Through Hole Epitaxial Silicon Transistor - TO-92-3
Trans GP BJT PNP 60V 1A 3-Pin TO-92 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-226-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight178.2 mg
Technical
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage-200 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-6 V
Gain Bandwidth Product120 MHz
hFE Min200
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Transition Frequency120 MHz
Voltage Rating (DC)-60 V