Diodes Inc. ZXTN25012EFLTA

Name: Diodes Inc. ZXTN25012EFLTA
Brand: Diodes Inc.
SKU: ZXTN25012EFLTA

Single Bipolar Transistor, NPN, 12 V, 2 A, 350 mW, SOT-23, 3 Pins, Surface Mount

$ 0.243

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		ZXTN25012EFLTA	42,000	3K						0.143	3h
Newark		ZXTN25012EFLTA	1,495	5	Cut Tape		0.437	0.316	0.239	0.239
Verical	2	ZXTN25012EFLTA	42,000	3K						0.133
Arrow Electronics		ZXTN25012EFLTA	3,000	372					0.183	0.148
DigiKey	3	ZXTN25012EFLCT-ND	4,356	1	Cut Tape	0.880	0.546	0.353	0.243	0.243

数据表和文档

下载 Diodes Inc. ZXTN25012EFLTA 的数据表和制造商文档。

IHS

Datasheet8 页19 年前

Diodes Inc SCT

Future Electronics

库存历史记录

3 个月趋势:

-27.15%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-01-05

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. ZXTN25012EFLTA 的描述。

Single Bipolar Transistor, NPN, 12 V, 2 A, 350 mW, SOT-23, 3 Pins, Surface Mount

Avnet Silica

ZXTN25012EFL Series 12 V 2 A NPN SMT Low Power Transistor - SOT-23

Future Electronics

Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon

Semicontronic

General Purpose Transistors NPN Ic=2A Vceo=12V hfe=500~1500 P=350mW SOT23

HQonline

NPN TRANSISTOR 12V 2A SOT23 RoHSconf

Rutronik

Trans GP BJT NPN 12V 2A 350mW 3-Pin SOT-23 T/R

Verical

TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Power Dissipation Pd:350mW; DC Collector Current:5A; DC Current Gain hFE:800; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:130mV; Continuous Collector Current Ic Max:2A; Current Ib:500mA; Current Ic Continuous a Max:5A; Current Ic hFE:2A; Gain Bandwidth ft Typ:260MHz; Hfe Min:370; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:SMD; Turn Off Time:72ns; Turn On Time:70ns; Voltage Vcbo:20V

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