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描述
由其分销商提供的 Diodes Inc. BFS17NTA 的描述。
BFS17N Series 11 V 50 mA NPN Surface Mount Transistor - SOT-23-3
General Purpose Transistors NPN Ic=50mA Vceo=11V hfe=56~180 P=350mW SOT23
NPN 350mW 3V 500nA 20V 11V 50mA SOT-23-3 2.9mm*1.3mm*980¦Ìm
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN
TRANSISTOR, NPN, 11V, 0.05A, SOT-23 ROHS COMPLIANT: YES
Bipolar Transistors - BJT SINGLE NPN 3.2GHz 50mA 330mw
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)20 V
Collector Emitter Breakdown Voltage11 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)11 V
Continuous Collector Current50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Gain Bandwidth Product3.2 GHz
hFE Min56
Max Breakdown Voltage11 V
Max Collector Current50 mA
Max Frequency3.2 MHz
Max Operating Temperature150 °C
Max Power Dissipation330 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Transition Frequency3.2 GHz
Dimensions
Height1.1 mm
Length3 mm
Width1.4 mm