供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-08
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
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MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
InfineonIRFR5505TRLPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W
描述
由其分销商提供的 Diodes Inc. ZXMP6A17KTC 的描述。
Mosfet, P-Ch, 60V, 6.6A, Dpak Rohs Compliant: Yes |Diodes Inc. ZXMP6A17KTC
P-Channel 60 V 125 mOhm Surface Mount Enhancement Mode Mosfet - TO252-3L
60V P-CHANNEL ENHANCEMENT MODE MOSFET Power Field-Effect Transistor, 4.4A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)4.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time11.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance637 pF
Max Operating Temperature150 °C
Max Power Dissipation9.25 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation9.25 W
Rds On Max125 mΩ
Resistance125 mΩ
Rise Time3.4 ns
Schedule B8541290080
Turn-Off Delay Time26.2 ns
Turn-On Delay Time2.6 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm