供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-11-16
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
Diodes Inc.DMN6068LK3-13
Power MOSFET, N Channel, 60 V, 8.5 A, 68 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
Diodes Inc.ZXMN6A08KTC
Single N-Channel 60 V 0.15 Ohm 3.8 nC 8.94 mW Silicon SMT Mosfet - TO-252-3
InfineonIPD800N06NGBTMA1
MOSFET N-CH 60V 16A TO252-3 N-Channel 60 V 16A (Tc) 47W (Tc) Surface Mount PG-TO252-3
描述
由其分销商提供的 Diodes Inc. ZXMP6A16KTC 的描述。
Trans MOSFET P-CH 60V 8.2A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 60V DPAK
P-Channel 60 V 0.085 O Surface Mount Power MOSFET - TO-252
P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
Diodes Inc SCT
MOSFET, P, 60V, D-PAK ;ROHS COMPLIANT: YES
DIODES INC. - ZXMP6A16KTC - MOSFET, P, 60V, D-PAK
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET P-Channel 60V 8.2A DPAK
DiodesZetex PChannel EnhancedMOSTube, Vds=60 V, 8.2 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
MOSFET, P, 60V, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:9.76W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; Current Id Max:-8.2A; Package / Case:DPAK; Power Dissipation Pd:9.76W; Termination Type:SMD; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)5.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.021 nF
Max Operating Temperature150 °C
Max Power Dissipation9.76 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation9.76 W
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time4.1 ns
Schedule B8541290080
Threshold Voltage-1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time3.5 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm