Diodes Inc. ZXMN3A01FTA

Name: Diodes Inc. ZXMN3A01FTA
Brand: Diodes Inc.
SKU: ZXMN3A01FTA

ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

$ 0.221

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Distributor		SKU		Min	Pkg
Future Electronics	2	ZXMN3A01FTA	6,000	3K	Tape & Reel					0.240
TME	2	ZXMN3A01FTA	4,047	1		0.480	0.302	0.208	0.176	0.176	21h
DigiKey	2	ZXMN3A01FCT-ND	18	1	Cut Tape	0.790	0.490	0.315	0.216	0.216
RS (Formerly Allied Electronics)		ZXMN3A01FTA	0	25	Bulk			0.710	0.620	0.620	16h
Avnet		ZXMN3A01FTA	0	3K						0.124	2d

数据表和文档

下载 Diodes Inc. ZXMN3A01FTA 的数据表和制造商文档。

IHS

Datasheet7 页11 年前

Datasheet7 页23 年前

Diodes Inc SCT

Future Electronics

iiiC

库存历史记录

3 个月趋势:

-42.27%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. ZXMN3A01FTA 的描述。

ZXMN3A01 Series 30 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3

Future Electronics

30 V N-CHANNEL ENHANCEMENT MODE MOSFET Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N SOT-23 REEL 3K; Transistor Polarity:N; Max Current Id:2A; Max Voltage Vds:30V; On State Resistance:0.12ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:806mW; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:SOT-23; No. of Pins:3; Case Style:SOT-23; Cont Current Id:2A; Current Temperature:25°C; Max Junction Temperature Tj:150°C; Max On State Resistance:0.12ohm; Max Power Dissipation Ptot:625mW; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:1V; No. of Transistors:1; Power Dissipation Pd:625mW; Pulse Current Idm:8A; Reel Quantity:3000; SMD Marking:7N3; Tape Width:8mm; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:30V; Typ Voltage Vgs th:1V; Voltage Vgs Rds on Measurement:10V

Farnell