供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-03-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDN358P 的描述。
P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.5A, 125mΩ
Power MOSFET, P Channel, 30 V, 1.6 A, 0.125 ohm, SOT-23, Surface Mount
MOSFET Operating temperature: -55...150 °C Marking: 358 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW
MOSFET, P, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.9V; Power Dissipati
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.5 A
Current Rating-1.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance182 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation460 mW
Rds On Max125 mΩ
Resistance125 MΩ
Rise Time13 ns
Schedule B8541210080
Threshold Voltage-1.9 V
Turn-Off Delay Time12 ns
Turn-On Delay Time5 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.22 mm
Length2.92 mm
Width3.05 mm