Diodes Inc. ZVN3306A

Name: Diodes Inc. ZVN3306A
Brand: Diodes Inc.
SKU: ZVN3306A

N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92

$ 0.415

Production

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Distributor		SKU		Min	Pkg
Avnet		ZVN3306A	12,000	4K						0.255	2d
Verical	2	ZVN3306A	12,000	4K						0.287
Arrow Electronics		ZVN3306A	1,983	244					0.489	0.489
Rutronik		STDMOS1061	8,000	4K						0.334	17h
DigiKey		ZVN3306A-ND	1,672	1	Bulk	1.410	0.887	0.586	0.415	0.326

数据表和文档

下载 Diodes Inc. ZVN3306A 的数据表和制造商文档。

Newark

Datasheet3 页19 年前

IHS

Diodes Inc SCT

Future Electronics

库存历史记录

3 个月趋势:

+22.07%

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Diodes Inc.ZVN3306A

Diodes Inc.ZVN3306ASTZ

Price @ 1000

$ 0.415

$ 0.436

Stock

258,868

422,087

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

270 mA

Threshold Voltage

2.4 V

Rds On Max

5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

625 mW

Input Capacitance

35 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1992-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. ZVN3306A 的描述。

N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92

Future Electronics

N CHANNEL MOSFET, 60V, 270mA, TO-92

Component Sense

Trans MOSFET N-CH 60V 0.27A Automotive 3-Pin E-Line

Verical

Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes

Newark

Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

Diodes Inc SCT

DiodesZetex NMOS, Vds=60 V, 270 mA, E-Line, , 3

UnikeyIC

MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:270mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:625mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270mA; Current Temperature:25°C; Device Marking:ZVN3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

element14 APAC