备用零件
Price @ 1000
$ 0.499
Stock
55,281
246,812
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
150 V
150 V
Max Collector Current
4 A
4 A
Transition Frequency
90 MHz
90 MHz
Collector Emitter Saturation Voltage
260 mV
260 mV
hFE Min
35
100
Power Dissipation
-
1.2 W
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 Diodes Inc. ZTX855STZ 的描述。
Power Bipolar Transistor, 4A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Big Chip SELine
Trans GP BJT NPN 150V 4A 1200mW 3-Pin E-Line Box
TRANS NPN 150V 4A E-LINE
NPN, 150V, 4A, E-Line, 1.2W
Diodes Inc SCT
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)250 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage260 mV
Collector Emitter Voltage (VCEO)150 V
Continuous Collector Current4 A
Current Rating4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Gain Bandwidth Product90 MHz
hFE Min35
Max Collector Current4 A
Max Operating Temperature200 °C
Max Power Dissipation1.2 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Box (TB)
PolarityNPN
Transition Frequency90 MHz
Voltage Rating (DC)150 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm