Diodes Inc. ZTX853

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

ZTX853 Series NPN 4 A 100 V Silicon Planar Medium Power Transistor - TO-92-3

Bipolar Transistors - BJT NPN Medium Power

200mV@ 400mA,4A NPN 1.2W 6V 50nA 200V 100V 4A EP-3SC , 4.57mm*2.28mm*3.9mm

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Typ Gain Bandwidth ft:130MHz; Power Dissipation Pd:1.2W; DC Collector Current:4A; DC Current Gain hFE:200; Operating Temperature ;RoHS Compliant: Yes

TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:1.2W; DC Collector Current:4A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:130MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:10A; Termination Type:Through Hole; Voltage Vcbo:200V