Diodes Inc. ZTX558

Name: Diodes Inc. ZTX558
Brand: Diodes Inc.
SKU: ZTX558

Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon

$ 0.354

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		ZTX558	10,530	1		0.929	0.643	0.475	0.370	0.369
DigiKey		ZTX558-ND	3,796	1	Bulk	1.170	0.732	0.480	0.336	0.261
TME	2	ZTX558	0	4K						0.285	1h
Avnet		ZTX558	0	4K						0.197	5h
RS (Formerly Allied Electronics)		ZTX558	0	10	Bulk		1.000	0.880	0.880	0.880	16h

数据表和文档

下载 Diodes Inc. ZTX558 的数据表和制造商文档。

Newark

Datasheet2 页19 年前

IHS

Diodes Inc SCT

Future Electronics

iiiC

库存历史记录

3 个月趋势:

-3.04%

CAD 模型

从我们值得信赖的合作伙伴处下载 Diodes Inc. ZTX558 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

Diodes Inc.ZTX558

Diodes Inc.ZTX558STZ

Price @ 1000

$ 0.354

$ 0.4

Stock

199,998

290,653

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

Polarity

PNP

Collector Emitter Breakdown Voltage

400 V

Max Collector Current

200 mA

Transition Frequency

50 MHz

Collector Emitter Saturation Voltage

500 mV

hFE Min

100

Power Dissipation

1 W

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-20

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 Diodes Inc. ZTX558 的描述。

Small Signal Bipolar Transistor, 0.2A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon

Abacus Technologies

ZTX558 Series PNP 200 mA 400 V Silicon Planar Medium Power Transistor - TO-92-3

Future Electronics

TRANSISTOR, PNP, E-LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +200°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:200mA; Current Ic @ Vce Sat:50mA; Current Ic Continuous a Max:200mA; Current Ic hFE:50mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Gain Bandwidth ft Typ:50MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:400V

element14 APAC