Diodes Inc. MMBT2222AT-7-F

Name: Diodes Inc. MMBT2222AT-7-F
Brand: Diodes Inc.
SKU: MMBT2222AT-7-F

Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 150 mW, SOT-523, Surface Mount

$ 0.085

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Avnet		MMBT2222AT-7-F	3,000	3K						0.039	12h
DigiKey	3	MMBT2222AT-FDICT-ND	128,172	1	Cut Tape	0.310	0.191	0.119	0.078	0.078
Arrow Electronics		MMBT2222AT-7-F	1,212	1212						0.040
Verical		MMBT2222AT-7-F	1,212	1212						0.040
TME	2	MMBT2222AT-7-F	619	1		0.266	0.160	0.101	0.065	0.043	2h

数据表和文档

下载 Diodes Inc. MMBT2222AT-7-F 的数据表和制造商文档。

IHS

Datasheet6 页8 年前

Upverter

Newark

Diodes Inc SCT

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-17.89%

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Diodes Inc.MMBT2222AT-7-F

onsemiMMBT2222ALT1G

Price @ 1000

$ 0.085

$ 0.036

Stock

2,646,497

116,943,812

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-523

SOT-23

Polarity

NPN

Collector Emitter Breakdown Voltage

40 V

Max Collector Current

600 mA

Transition Frequency

300 MHz

Collector Emitter Saturation Voltage

300 mV

hFE Min

Power Dissipation

150 mW

225 mW

供应链

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 Diodes Inc. MMBT2222AT-7-F 的描述。

Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 150 mW, SOT-523, Surface Mount

Avnet Silica

Bipolar Transistors (BJT); MMBT2222AT-7-F; DIODES; NPN; 40 V; 600 mA; 3

Maritex

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

Semicontronic

BIPOLAR TRANSISTOR NPN SOT-523 ROHS 3K

Master Electronics

Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:300Mhz; Product Range:- Rohs Compliant: No |Diodes Inc. MMBT2222AT-7-F.

Newark

TRANSISTOR, NPN, SOT523; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:150mW; DC Collector Current:600mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-523; No. of Pins:3; Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:600mA; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; Package / Case:SOT-523; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:Small Signal

element14 APAC