Diodes Inc. FZT857TA

Name: Diodes Inc. FZT857TA
Brand: Diodes Inc.
SKU: FZT857TA

Bipolar (BJT) Single Transistor, NPN, 300 V, 3.5 A, 3 W, SOT-223, Surface Mount

$ 0.427

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		FZT857TA	2,000	1K					0.407	0.382	16h
Verical		FZT857TA	1,000	1K					0.367	0.367
Arrow Electronics		FZT857TA	985	564					0.208	0.208
Future Electronics	2	FZT857TA	16,000	1K	Tape & Reel				0.490	0.475
Onlinecomponents.com		FZT857TA	5,439	1	Bulk	3.820	3.820	1.160	0.514	0.460

数据表和文档

下载 Diodes Inc. FZT857TA 的数据表和制造商文档。

IHS

Datasheet7 页9 年前

Datasheet3 页0 年前

RS (Formerly Allied Electronics)

Future Electronics

Farnell

Diodes Inc SCT

库存历史记录

3 个月趋势:

+30.89%

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Diodes Inc.FZT857TA

Diodes Inc.FZT857

Price @ 1000

$ 0.427

$ 0.727

Stock

512,024

119,448

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-223-4

SOT-223

Polarity

NPN

Collector Emitter Breakdown Voltage

300 V

Max Collector Current

3.5 A

Transition Frequency

80 MHz

Collector Emitter Saturation Voltage

345 mV

hFE Min

100

Power Dissipation

3 W

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date1993-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. FZT857TA 的描述。

Bipolar (BJT) Single Transistor, NPN, 300 V, 3.5 A, 3 W, SOT-223, Surface Mount

Avnet Silica

Trans GP BJT NPN 300V 3.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 300V 3.5A SOT-223

Win Source

300V 3W 100@500mA,10V 3.5A NPN SOT-223 Bipolar Transistors - BJT ROHS

Dasenic

FZT857 Series NPN 3.5 A 300 V SMT Silicon High Performance Transistor - SOT-223

Future Electronics

General Purpose Transistors NPN Ic=3.5A Vceo=300V hfe=100~300 P=3W SOT223

HQonline

SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR Power Bipolar Transistor, 3.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

ComSIT Distribution GmbH

TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:300V; Typ Gain Bandwidth ft:80MHz; Power Dissipation Pd:3W; DC Collector Current:3.5A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic Hfe NPN Device:0.5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:3.5A; Max Current Ic Continuous a:3.5A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:100mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:5A; Reel Quantity:1000; SMD Marking:FZT857; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:350V

Farnell